Electro-Films (EFI) / Vishay Electro-Films (EFI) / Vishay
SI4922BDY-T1-GE3
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SI4922BDY-T1-GE3

Part Number: SI4922BDY-T1-GE3
Manufacturer/Brand: Electro-Films (EFI) / Vishay
Product description MOSFET 2N-CH 30V 8A 8-SOIC
Datasheets: 1.SI4922BDY-T1-GE3.pdf
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Lead Free Status / ROHS Status Lead free / ROHS Compliant
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Specifications of SI4922BDY-T1-GE3

Part Number SI4922BDY-T1-GE3 Manufacturer Electro-Films (EFI) / Vishay
Series TrenchFET®FET Type 2 N-Channel (Dual)
Packaging Tape & Reel (TR)Description MOSFET 2N-CH 30V 8A 8-SOIC
FET Feature StandardOther Names SI4922BDY-T1-GE3-ND SI4922BDY-T1-GE3TR
Power - Max 3.1WMounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)Base Part Number SI4922
Quantity Available 112703 pcsVgs(th) (Max) @ Id 1.8V @ 250µA
Detailed Description Mosfet Array 2 N-Channel (Dual) 30V 8A 3.1W Surface Mount 8-SOOperating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 16 mOhm @ 5A, 10VSupplier Device Package 8-SO
Gate Charge (Qg) (Max) @ Vgs 62nC @ 10VDrain to Source Voltage (Vdss) 30V
Lead Free Status / RoHS Status Lead free / RoHS CompliantMoisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 2070pF @ 15VCurrent - Continuous Drain (Id) @ 25°C 8A
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