LAPIS Semiconductor LAPIS Semiconductor
BSM180D12P2C101
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BSM180D12P2C101

Part Number: BSM180D12P2C101
Manufacturer/Brand: LAPIS Semiconductor
Product description MOSFET 2N-CH 1200V 180A MODULE
Datasheets: 1.BSM180D12P2C101.pdf 2.BSM180D12P2C101.pdf 3.BSM180D12P2C101.pdf
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Lead Free Status / ROHS Status Lead free / ROHS Compliant
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Specifications of BSM180D12P2C101

Part Number BSM180D12P2C101 Manufacturer LAPIS Semiconductor
Series -FET Type 2 N-Channel (Half Bridge)
Packaging BulkDescription MOSFET 2N-CH 1200V 180A MODULE
FET Feature Silicon Carbide (SiC)Power - Max 1130W
Package / Case ModuleQuantity Available 227 pcs
Vgs(th) (Max) @ Id 4V @ 35.2mADetailed Description Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 204A (Tc) 1130W Module
Operating Temperature -40°C ~ 150°C (TJ)Rds On (Max) @ Id, Vgs -
Supplier Device Package ModuleGate Charge (Qg) (Max) @ Vgs -
Drain to Source Voltage (Vdss) 1200V (1.2kV)Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)Input Capacitance (Ciss) (Max) @ Vds 23000pF @ 10V
Current - Continuous Drain (Id) @ 25°C 204A (Tc)
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