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ULN2803APG,CN
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ULN2803APG,CN

Part Number: ULN2803APG,CN
Manufacturer/Brand: Toshiba Semiconductor and Storage
Product description TRANS 8NPN DARL 50V 0.5A 18DIP
Datasheets: 1.ULN2803APG,CN.pdf 2.ULN2803APG,CN.pdf 3.ULN2803APG,CN.pdf
Stock Condition N/A
Ship From Hong Kong
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Shipment Way DHL/Fedex/TNT/UPS/EMS
Lead Free Status / ROHS Status Lead free / ROHS Compliant
In StockN/A
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Specifications of ULN2803APG,CN

Part Number ULN2803APG,CN Manufacturer Toshiba Semiconductor and Storage
Series -Packaging Tube
Description TRANS 8NPN DARL 50V 0.5A 18DIPOther Names ULN2803APG ULN2803APG(5,M) ULN2803APG(CNHZN) ULN2803APG(CNHZN)-ND ULN2803APG(O,M) ULN2803APG(O,N,HZA ULN2803APG(O,N,HZN ULN2803APG(OM) ULN2803APG(OM)-ND ULN2803APG(ONHZA ULN2803APG(ONHZA-ND ULN2803APG(ONHZN ULN2803APG(ONHZN-ND ULN2803APG-ND ULN2803APGCN ULN2803APGONHZN
Power - Max 1.47WMounting Type Through Hole
Package / Case 18-DIP (0.300", 7.62mm)Transistor Type 8 NPN Darlington
Base Part Number ULN280*AQuantity Available 3166 pcs
Detailed Description Bipolar (BJT) Transistor Array 8 NPN Darlington 50V 500mA 1.47W Through Hole 18-DIPOperating Temperature -40°C ~ 85°C (TA)
Frequency - Transition -Supplier Device Package 18-DIP
Vce Saturation (Max) @ Ib, Ic 1.6V @ 500µA, 350mACurrent - Collector (Ic) (Max) 500mA
Lead Free Status / RoHS Status Lead free / RoHS CompliantCurrent - Collector Cutoff (Max) -
Moisture Sensitivity Level (MSL) 1 (Unlimited)DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 350mA, 2V
Voltage - Collector Emitter Breakdown (Max) 50V
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