TRS10E65C,S1Q

Name: TRS10E65C,S1Q
Brand: Toshiba Semiconductor and Storage
Availability: InStock
Rating: 5 (1 reviews)

Part Number:	TRS10E65C,S1Q
Manufacturer/Brand:	Toshiba Semiconductor and Storage
Product description	DIODE SCHOTTKY 650V 10A TO220-2L
Datasheets:	1.TRS10E65C,S1Q.pdf 2.TRS10E65C,S1Q.pdf
Stock Condition	N/A
Ship From	Hong Kong
Payment	Discover Card/Paypal/Wire transfer/Visa
Shipment Way	DHL/Fedex/TNT/UPS/EMS
Lead Free Status / ROHS Status	Lead free / ROHS Compliant

In StockN/A

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Specifications of TRS10E65C,S1Q

Part Number	TRS10E65C,S1Q	Manufacturer	Toshiba Semiconductor and Storage
Speed	No Recovery Time > 500mA (Io)	Series	-
Packaging	Tube	Diode Type	Silicon Carbide Schottky
Description	DIODE SCHOTTKY 650V 10A TO220-2L	Other Names	TRS10E65C,S1Q(S TRS10E65C,S1Q-ND TRS10E65CS1Q
Mounting Type	Through Hole	Package / Case	TO-220-2
Quantity Available	8442 pcs	Capacitance @ Vr, F	-
Detailed Description	Diode Silicon Carbide Schottky 650V 10A (DC) Through Hole TO-220-2L	Supplier Device Package	TO-220-2L
Reverse Recovery Time (trr)	0ns	Current - Reverse Leakage @ Vr	90µA @ 650V
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Voltage - DC Reverse (Vr) (Max)	650V
Current - Average Rectified (Io)	10A (DC)	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Operating Temperature - Junction	175°C (Max)	Voltage - Forward (Vf) (Max) @ If	1.7V @ 10A

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TRS10E65C,S1Q

Specifications of TRS10E65C,S1Q

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