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TK8A10K3,S5Q
| Part Number: | TK8A10K3,S5Q |
|---|---|
| Manufacturer/Brand: | Toshiba Semiconductor and Storage |
| Product description | MOSFET N-CH 100V 8A TO-220SIS |
| Datasheets: | 1.TK8A10K3,S5Q.pdf 2.TK8A10K3,S5Q.pdf |
| Stock Condition | N/A |
| Ship From | Hong Kong |
| Payment | Discover Card/Paypal/Wire transfer/Visa |
| Shipment Way | DHL/Fedex/TNT/UPS/EMS |
| Lead Free Status / ROHS Status |  Lead free / ROHS Compliant
|
In StockN/A
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Specifications of TK8A10K3,S5Q
| Part Number | TK8A10K3,S5Q | Manufacturer | Toshiba Semiconductor and Storage |
|---|---|---|---|
| Series | U-MOSIV | FET Type | N-Channel |
| Packaging | Tube | Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) | Description | MOSFET N-CH 100V 8A TO-220SIS |
| FET Feature | - | Other Names | TK8A10K3,S5Q(M TK8A10K3,S5Q,M TK8A10K3S5Q TK8A10K3S5QM TK8A10K3S5QM-ND |
| Mounting Type | Through Hole | Package / Case | TO-220-3 Full Pack |
| Quantity Available | 58786 pcs | Vgs(th) (Max) @ Id | 4V @ 1mA |
| Detailed Description | N-Channel 100V 8A (Ta) 18W (Tc) Through Hole TO-220SIS | Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 120 mOhm @ 4A, 10V | Power Dissipation (Max) | 18W (Tc) |
| Supplier Device Package | TO-220SIS | Gate Charge (Qg) (Max) @ Vgs | 12.9nC @ 10V |
| Drain to Source Voltage (Vdss) | 100V | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Input Capacitance (Ciss) (Max) @ Vds | 530pF @ 10V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
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|---|---|---|
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