Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
TK39N60X,S1F
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TK39N60X,S1F

Part Number: TK39N60X,S1F
Manufacturer/Brand: Toshiba Semiconductor and Storage
Product description MOSFET N-CH 600V 38.8A TO-247
Datasheets: 1.TK39N60X,S1F.pdf 2.TK39N60X,S1F.pdf
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Lead Free Status / ROHS Status Lead free / ROHS Compliant
In StockN/A
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Specifications of TK39N60X,S1F

Part Number TK39N60X,S1F Manufacturer Toshiba Semiconductor and Storage
Series DTMOSIV-HFET Type N-Channel
Packaging TubeVgs (Max) ±30V
Technology MOSFET (Metal Oxide)Description MOSFET N-CH 600V 38.8A TO-247
FET Feature Super JunctionOther Names TK39N60X,S1F(S TK39N60XS1F
Mounting Type Through HolePackage / Case TO-247-3
Quantity Available 13534 pcsVgs(th) (Max) @ Id 3.5V @ 1.9mA
Detailed Description N-Channel 600V 38.8A (Ta) 270W (Tc) Through Hole TO-247Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 65 mOhm @ 12.5A, 10VPower Dissipation (Max) 270W (Tc)
Supplier Device Package TO-247Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V
Drain to Source Voltage (Vdss) 600VLead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)Input Capacitance (Ciss) (Max) @ Vds 4100pF @ 300V
Drive Voltage (Max Rds On, Min Rds On) 10VCurrent - Continuous Drain (Id) @ 25°C 38.8A (Ta)
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