Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
TK32E12N1,S1X
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TK32E12N1,S1X

Part Number: TK32E12N1,S1X
Manufacturer/Brand: Toshiba Semiconductor and Storage
Product description MOSFET N CH 120V 60A TO-220
Datasheets: 1.TK32E12N1,S1X.pdf
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Shipment Way DHL/Fedex/TNT/UPS/EMS
Lead Free Status / ROHS Status Lead free / ROHS Compliant
In StockN/A
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Specifications of TK32E12N1,S1X

Part Number TK32E12N1,S1X Manufacturer Toshiba Semiconductor and Storage
Series U-MOSVIII-HFET Type N-Channel
Packaging TubeVgs (Max) ±20V
Technology MOSFET (Metal Oxide)Description MOSFET N CH 120V 60A TO-220
FET Feature -Other Names TK32E12N1,S1X(S TK32E12N1S1X
Mounting Type Through HolePackage / Case TO-220-3
Quantity Available 65622 pcsVgs(th) (Max) @ Id 4V @ 500µA
Detailed Description N-Channel 120V 60A (Tc) 98W (Tc) Through Hole TO-220Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 13.8 mOhm @ 16A, 10VPower Dissipation (Max) 98W (Tc)
Supplier Device Package TO-220Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Drain to Source Voltage (Vdss) 120VLead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 60V
Drive Voltage (Max Rds On, Min Rds On) 10VCurrent - Continuous Drain (Id) @ 25°C 60A (Tc)
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