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TK16J60W,S1VQ
| Part Number: | TK16J60W,S1VQ |
|---|---|
| Manufacturer/Brand: | Toshiba Semiconductor and Storage |
| Product description | MOSFET N CH 600V 15.8A TO-3P(N) |
| Datasheets: | 1.TK16J60W,S1VQ.pdf 2.TK16J60W,S1VQ.pdf |
| Stock Condition | N/A |
| Ship From | Hong Kong |
| Payment | Discover Card/Paypal/Wire transfer/Visa |
| Shipment Way | DHL/Fedex/TNT/UPS/EMS |
| Lead Free Status / ROHS Status |  Lead free / ROHS Compliant
|
In StockN/A
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Specifications of TK16J60W,S1VQ
| Part Number | TK16J60W,S1VQ | Manufacturer | Toshiba Semiconductor and Storage |
|---|---|---|---|
| Series | DTMOSIV | FET Type | N-Channel |
| Packaging | Tube | Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) | Description | MOSFET N CH 600V 15.8A TO-3P(N) |
| FET Feature | Super Junction | Other Names | TK16J60W,S1VQ(O TK16J60WS1VQ |
| Mounting Type | Through Hole | Package / Case | TO-3P-3, SC-65-3 |
| Quantity Available | 18330 pcs | Vgs(th) (Max) @ Id | 3.7V @ 790µA |
| Detailed Description | N-Channel 600V 15.8A (Ta) 130W (Tc) Through Hole TO-3P(N) | Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 190 mOhm @ 7.9A, 10V | Power Dissipation (Max) | 130W (Tc) |
| Supplier Device Package | TO-3P(N) | Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
| Drain to Source Voltage (Vdss) | 600V | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Input Capacitance (Ciss) (Max) @ Vds | 1350pF @ 300V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | Current - Continuous Drain (Id) @ 25°C | 15.8A (Ta) |
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|---|---|---|
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