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TK10Q60W,S1VQ
| Part Number: | TK10Q60W,S1VQ |
|---|---|
| Manufacturer/Brand: | Toshiba Semiconductor and Storage |
| Product description | MOSFET N-CH 600V 9.7A IPAK |
| Datasheets: | 1.TK10Q60W,S1VQ.pdf 2.TK10Q60W,S1VQ.pdf |
| Stock Condition | N/A |
| Ship From | Hong Kong |
| Payment | Discover Card/Paypal/Wire transfer/Visa |
| Shipment Way | DHL/Fedex/TNT/UPS/EMS |
| Lead Free Status / ROHS Status |  Lead free / ROHS Compliant
|
In StockN/A
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Specifications of TK10Q60W,S1VQ
| Part Number | TK10Q60W,S1VQ | Manufacturer | Toshiba Semiconductor and Storage |
|---|---|---|---|
| Series | DTMOSIV | FET Type | N-Channel |
| Packaging | Tube | Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) | Description | MOSFET N-CH 600V 9.7A IPAK |
| FET Feature | - | Other Names | TK10Q60W,S1VQ(S TK10Q60WS1VQ |
| Mounting Type | Through Hole | Package / Case | TO-251-3 Stub Leads, IPak |
| Quantity Available | 25932 pcs | Vgs(th) (Max) @ Id | 3.7V @ 500µA |
| Detailed Description | N-Channel 600V 9.7A (Ta) 80W (Tc) Through Hole I-PAK | Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 430 mOhm @ 4.9A, 10V | Power Dissipation (Max) | 80W (Tc) |
| Supplier Device Package | I-PAK | Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Drain to Source Voltage (Vdss) | 600V | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 300V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | Current - Continuous Drain (Id) @ 25°C | 9.7A (Ta) |
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| FEDEX | www.FedEx.com | From $35.00 basic shipping fee depend on zone and country. |
|---|---|---|
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| TNT | www.TNT.com | From $35.00 basic shipping fee depend on zone and country. |
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