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TK10E60W,S1VX
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TK10E60W,S1VX

Part Number: TK10E60W,S1VX
Manufacturer/Brand: Toshiba Semiconductor and Storage
Product description MOSFET N CH 600V 9.7A TO-220
Datasheets: 1.TK10E60W,S1VX.pdf 2.TK10E60W,S1VX.pdf
Stock Condition N/A
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Shipment Way DHL/Fedex/TNT/UPS/EMS
Lead Free Status / ROHS Status Lead free / ROHS Compliant
In StockN/A
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Specifications of TK10E60W,S1VX

Part Number TK10E60W,S1VX Manufacturer Toshiba Semiconductor and Storage
Series DTMOSIVFET Type N-Channel
Packaging TubeVgs (Max) ±30V
Technology MOSFET (Metal Oxide)Description MOSFET N CH 600V 9.7A TO-220
FET Feature Super JunctionOther Names TK10E60W,S1VX(S TK10E60WS1VX
Mounting Type Through HolePackage / Case TO-220-3
Quantity Available 29258 pcsVgs(th) (Max) @ Id 3.7V @ 500µA
Detailed Description N-Channel 600V 9.7A (Ta) 100W (Tc) Through Hole TO-220Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 380 mOhm @ 4.9A, 10VPower Dissipation (Max) 100W (Tc)
Supplier Device Package TO-220Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Drain to Source Voltage (Vdss) 600VLead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)Input Capacitance (Ciss) (Max) @ Vds 700pF @ 300V
Drive Voltage (Max Rds On, Min Rds On) 10VCurrent - Continuous Drain (Id) @ 25°C 9.7A (Ta)
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