Electro-Films (EFI) / Vishay Electro-Films (EFI) / Vishay
SISS65DN-T1-GE3
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SISS65DN-T1-GE3

Part Number: SISS65DN-T1-GE3
Manufacturer/Brand: Electro-Films (EFI) / Vishay
Product description MOSFET P-CHAN 30V PPAK 1212-8S
Datasheets: 1.SISS65DN-T1-GE3.pdf
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Lead Free Status / ROHS Status Lead free / ROHS Compliant
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Specifications of SISS65DN-T1-GE3

Part Number SISS65DN-T1-GE3 Manufacturer Electro-Films (EFI) / Vishay
Series TrenchFET® Gen IIIFET Type P-Channel
Packaging Cut Tape (CT)Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)Description MOSFET P-CHAN 30V PPAK 1212-8S
FET Feature -Other Names SISS65DN-T1-GE3CT
Mounting Type Surface MountPackage / Case PowerPAK® 1212-8S
Quantity Available 93924 pcsVgs(th) (Max) @ Id 2.3V @ 250µA
Detailed Description P-Channel 30V 25.9A (Ta), 94A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8SOperating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 4.6 mOhm @ 15A, 10VPower Dissipation (Max) 5.1W (Ta), 65.8W (Tc)
Supplier Device Package PowerPAK® 1212-8SGate Charge (Qg) (Max) @ Vgs 138nC @ 10V
Drain to Source Voltage (Vdss) 30VLead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)Input Capacitance (Ciss) (Max) @ Vds 4930pF @ 15V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10VCurrent - Continuous Drain (Id) @ 25°C 25.9A (Ta), 94A (Tc)
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