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SIRA12BDP-T1-GE3
| Part Number: | SIRA12BDP-T1-GE3 |
|---|---|
| Manufacturer/Brand: | Electro-Films (EFI) / Vishay |
| Product description | MOSFET N-CHAN 30V |
| Datasheets: | 1.SIRA12BDP-T1-GE3.pdf |
| Stock Condition | N/A |
| Ship From | Hong Kong |
| Payment | Discover Card/Paypal/Wire transfer/Visa |
| Shipment Way | DHL/Fedex/TNT/UPS/EMS |
| Lead Free Status / ROHS Status |  Lead free / ROHS Compliant
|
In StockN/A
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Specifications of SIRA12BDP-T1-GE3
| Part Number | SIRA12BDP-T1-GE3 | Manufacturer | Electro-Films (EFI) / Vishay |
|---|---|---|---|
| Series | TrenchFET® Gen IV | FET Type | N-Channel |
| Packaging | Cut Tape (CT) | Vgs (Max) | +20V, -16V |
| Technology | MOSFET (Metal Oxide) | Description | MOSFET N-CHAN 30V |
| FET Feature | - | Other Names | SIRA12BDP-T1-GE3CT |
| Mounting Type | Surface Mount | Package / Case | PowerPAK® SO-8 |
| Quantity Available | 113518 pcs | Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Detailed Description | N-Channel 30V 27A (Ta), 60A (Tc) 5W (Ta), 38W (Tc) Surface Mount PowerPAK® SO-8 | Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 4.3 mOhm @ 10A, 10V | Power Dissipation (Max) | 5W (Ta), 38W (Tc) |
| Supplier Device Package | PowerPAK® SO-8 | Gate Charge (Qg) (Max) @ Vgs | 32nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Input Capacitance (Ciss) (Max) @ Vds | 1470pF @ 15V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | Current - Continuous Drain (Id) @ 25°C | 27A (Ta), 60A (Tc) |
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| FEDEX | www.FedEx.com | From $35.00 basic shipping fee depend on zone and country. |
|---|---|---|
| DHL | www.DHL.com | From $35.00 basic shipping fee depend on zone and country. |
| UPS | www.UPS.com | From $35.00 basic shipping fee depend on zone and country. |
| TNT | www.TNT.com | From $35.00 basic shipping fee depend on zone and country. |
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