Electro-Films (EFI) / Vishay Electro-Films (EFI) / Vishay
SIR890DP-T1-GE3
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SIR890DP-T1-GE3

Part Number: SIR890DP-T1-GE3
Manufacturer/Brand: Electro-Films (EFI) / Vishay
Product description MOSFET N-CH 20V 50A PPAK SO-8
Datasheets: 1.SIR890DP-T1-GE3.pdf
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Lead Free Status / ROHS Status Lead free / ROHS Compliant
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Specifications of SIR890DP-T1-GE3

Part Number SIR890DP-T1-GE3 Manufacturer Electro-Films (EFI) / Vishay
Series TrenchFET®FET Type N-Channel
Packaging Cut Tape (CT)Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)Description MOSFET N-CH 20V 50A PPAK SO-8
FET Feature -Other Names SIR890DP-T1-GE3CT
Mounting Type Surface MountPackage / Case PowerPAK® SO-8
Quantity Available 26875 pcsVgs(th) (Max) @ Id 2.6V @ 250µA
Detailed Description N-Channel 20V 50A (Tc) 5W (Ta), 50W (Tc) Surface Mount PowerPAK® SO-8Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 2.9 mOhm @ 10A, 10VPower Dissipation (Max) 5W (Ta), 50W (Tc)
Supplier Device Package PowerPAK® SO-8Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Drain to Source Voltage (Vdss) 20VLead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)Input Capacitance (Ciss) (Max) @ Vds 2747pF @ 10V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10VCurrent - Continuous Drain (Id) @ 25°C 50A (Tc)
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