Electro-Films (EFI) / Vishay Electro-Films (EFI) / Vishay
SIHG33N65EF-GE3
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SIHG33N65EF-GE3

Part Number: SIHG33N65EF-GE3
Manufacturer/Brand: Electro-Films (EFI) / Vishay
Product description MOSFET N-CH 650V 31.6A TO-247AC
Datasheets: 1.SIHG33N65EF-GE3.pdf
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Lead Free Status / ROHS Status Lead free / ROHS Compliant
In StockN/A
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Specifications of SIHG33N65EF-GE3

Part Number SIHG33N65EF-GE3 Manufacturer Electro-Films (EFI) / Vishay
Series -FET Type N-Channel
Packaging TubeVgs (Max) ±30V
Technology MOSFET (Metal Oxide)Description MOSFET N-CH 650V 31.6A TO-247AC
FET Feature -Mounting Type Through Hole
Package / Case TO-247-3Quantity Available 12396 pcs
Vgs(th) (Max) @ Id 4V @ 250µADetailed Description N-Channel 650V 31.6A (Tc) 313W (Tc) Through Hole TO-247AC
Operating Temperature -55°C ~ 150°C (TJ)Rds On (Max) @ Id, Vgs 109 mOhm @ 16.5A, 10V
Power Dissipation (Max) 313W (Tc)Supplier Device Package TO-247AC
Gate Charge (Qg) (Max) @ Vgs 171nC @ 10VDrain to Source Voltage (Vdss) 650V
Lead Free Status / RoHS Status Lead free / RoHS CompliantMoisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 4026pF @ 100VDrive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 31.6A (Tc)
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