Electro-Films (EFI) / Vishay Electro-Films (EFI) / Vishay
SIHB35N60E-GE3
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SIHB35N60E-GE3

Part Number: SIHB35N60E-GE3
Manufacturer/Brand: Electro-Films (EFI) / Vishay
Product description MOSFET N-CH 600V 32A D2PAK TO263
Datasheets: 1.SIHB35N60E-GE3.pdf
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Lead Free Status / ROHS Status Lead free / ROHS Compliant
In StockN/A
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Specifications of SIHB35N60E-GE3

Part Number SIHB35N60E-GE3 Manufacturer Electro-Films (EFI) / Vishay
Series -FET Type N-Channel
Packaging TubeVgs (Max) ±30V
Technology MOSFET (Metal Oxide)Description MOSFET N-CH 600V 32A D2PAK TO263
FET Feature -Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263ABQuantity Available 13419 pcs
Vgs(th) (Max) @ Id 4V @ 250µADetailed Description N-Channel 650V 32A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)
Operating Temperature -55°C ~ 150°C (TJ)Rds On (Max) @ Id, Vgs 94 mOhm @ 17A, 10V
Power Dissipation (Max) 250W (Tc)Supplier Device Package D²PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs 132nC @ 10VDrain to Source Voltage (Vdss) 650V
Lead Free Status / RoHS Status Lead free / RoHS CompliantMoisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 2760pF @ 100VDrive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
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