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SIHB12N65E-GE3
| Part Number: | SIHB12N65E-GE3 |
|---|---|
| Manufacturer/Brand: | Electro-Films (EFI) / Vishay |
| Product description | MOSFET N-CH 650V 12A D2PAK |
| Datasheets: | 1.SIHB12N65E-GE3.pdf 2.SIHB12N65E-GE3.pdf |
| Stock Condition | N/A |
| Ship From | Hong Kong |
| Payment | Discover Card/Paypal/Wire transfer/Visa |
| Shipment Way | DHL/Fedex/TNT/UPS/EMS |
| Lead Free Status / ROHS Status |  Lead free / ROHS Compliant
|
In StockN/A
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Specifications of SIHB12N65E-GE3
| Part Number | SIHB12N65E-GE3 | Manufacturer | Electro-Films (EFI) / Vishay |
|---|---|---|---|
| Series | - | FET Type | N-Channel |
| Packaging | Cut Tape (CT) | Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) | Description | MOSFET N-CH 650V 12A D2PAK |
| FET Feature | - | Other Names | SIHB12N65E-GE3CT SIHB12N65E-GE3CT-ND |
| Mounting Type | Surface Mount | Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Quantity Available | 28213 pcs | Vgs(th) (Max) @ Id | 4V @ 250µA |
| Detailed Description | N-Channel 650V 12A (Tc) 156W (Tc) Surface Mount D²PAK (TO-263) | Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 380 mOhm @ 6A, 10V | Power Dissipation (Max) | 156W (Tc) |
| Supplier Device Package | D²PAK (TO-263) | Gate Charge (Qg) (Max) @ Vgs | 70nC @ 10V |
| Drain to Source Voltage (Vdss) | 650V | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Input Capacitance (Ciss) (Max) @ Vds | 1224pF @ 100V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
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| FEDEX | www.FedEx.com | From $35.00 basic shipping fee depend on zone and country. |
|---|---|---|
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| TNT | www.TNT.com | From $35.00 basic shipping fee depend on zone and country. |
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