Electro-Films (EFI) / Vishay Electro-Films (EFI) / Vishay
SI4200DY-T1-GE3
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SI4200DY-T1-GE3

Part Number: SI4200DY-T1-GE3
Manufacturer/Brand: Electro-Films (EFI) / Vishay
Product description MOSFET 2N-CH 25V 8A 8SOIC
Datasheets: 1.SI4200DY-T1-GE3.pdf
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Lead Free Status / ROHS Status Lead free / ROHS Compliant
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Specifications of SI4200DY-T1-GE3

Part Number SI4200DY-T1-GE3 Manufacturer Electro-Films (EFI) / Vishay
Series TrenchFET®FET Type 2 N-Channel (Dual)
Packaging Tape & Reel (TR)Description MOSFET 2N-CH 25V 8A 8SOIC
FET Feature Logic Level GateOther Names SI4200DY-T1-GE3-ND SI4200DY-T1-GE3TR
Power - Max 2.8WMounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)Quantity Available 408300 pcs
Vgs(th) (Max) @ Id 2.2V @ 250µADetailed Description Mosfet Array 2 N-Channel (Dual) 25V 8A 2.8W Surface Mount 8-SO
Operating Temperature -55°C ~ 150°C (TJ)Rds On (Max) @ Id, Vgs 25 mOhm @ 7.3A, 10V
Supplier Device Package 8-SOGate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Drain to Source Voltage (Vdss) 25VLead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)Input Capacitance (Ciss) (Max) @ Vds 415pF @ 13V
Current - Continuous Drain (Id) @ 25°C 8A
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