Electro-Films (EFI) / Vishay Electro-Films (EFI) / Vishay
SI4101DY-T1-GE3
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SI4101DY-T1-GE3

Part Number: SI4101DY-T1-GE3
Manufacturer/Brand: Electro-Films (EFI) / Vishay
Product description MOSFET P-CH 30V 25.7A 8SOIC
Datasheets: 1.SI4101DY-T1-GE3.pdf
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Lead Free Status / ROHS Status Lead free / ROHS Compliant
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Specifications of SI4101DY-T1-GE3

Part Number SI4101DY-T1-GE3 Manufacturer Electro-Films (EFI) / Vishay
Series TrenchFET®FET Type P-Channel
Packaging Cut Tape (CT)Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)Description MOSFET P-CH 30V 25.7A 8SOIC
FET Feature -Other Names SI4101DY-T1-GE3CT
Mounting Type Surface MountPackage / Case 8-SOIC (0.154", 3.90mm Width)
Quantity Available 89730 pcsVgs(th) (Max) @ Id 2.5V @ 250µA
Detailed Description P-Channel 30V 25.7A (Tc) 6W (Tc) Surface Mount 8-SOOperating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 6 mOhm @ 15A, 10VPower Dissipation (Max) 6W (Tc)
Supplier Device Package 8-SOGate Charge (Qg) (Max) @ Vgs 203nC @ 10V
Drain to Source Voltage (Vdss) 30VLead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)Input Capacitance (Ciss) (Max) @ Vds 8190pF @ 15V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10VCurrent - Continuous Drain (Id) @ 25°C 25.7A (Tc)
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