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SI3460DV-T1-E3
| Part Number: | SI3460DV-T1-E3 |
|---|---|
| Manufacturer/Brand: | Electro-Films (EFI) / Vishay |
| Product description | MOSFET N-CH 20V 5.1A 6TSOP |
| Datasheets: | 1.SI3460DV-T1-E3.pdf |
| Stock Condition | N/A |
| Ship From | Hong Kong |
| Payment | Discover Card/Paypal/Wire transfer/Visa |
| Shipment Way | DHL/Fedex/TNT/UPS/EMS |
| Lead Free Status / ROHS Status |  Lead free / ROHS Compliant
|
In StockN/A
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Specifications of SI3460DV-T1-E3
| Part Number | SI3460DV-T1-E3 | Manufacturer | Electro-Films (EFI) / Vishay |
|---|---|---|---|
| Series | TrenchFET® | FET Type | N-Channel |
| Packaging | Original-Reel® | Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) | Description | MOSFET N-CH 20V 5.1A 6TSOP |
| FET Feature | - | Other Names | SI3460DV-T1-E3DKR |
| Mounting Type | Surface Mount | Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Quantity Available | 47504 pcs | Vgs(th) (Max) @ Id | 450mV @ 1mA (Min) |
| Detailed Description | N-Channel 20V 5.1A (Ta) 1.1W (Ta) Surface Mount 6-TSOP | Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 27 mOhm @ 5.1A, 4.5V | Power Dissipation (Max) | 1.1W (Ta) |
| Supplier Device Package | 6-TSOP | Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 5.1A (Ta) |
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| FEDEX | www.FedEx.com | From $35.00 basic shipping fee depend on zone and country. |
|---|---|---|
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| TNT | www.TNT.com | From $35.00 basic shipping fee depend on zone and country. |
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