Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
RN1910FE(T5L,F,T)
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RN1910FE(T5L,F,T)

Part Number: RN1910FE(T5L,F,T)
Manufacturer/Brand: Toshiba Semiconductor and Storage
Product description TRANS 2NPN PREBIAS 0.1W ES6
Datasheets: 1.RN1910FE(T5L,F,T).pdf 2.RN1910FE(T5L,F,T).pdf 3.RN1910FE(T5L,F,T).pdf
Stock Condition N/A
Ship From Hong Kong
Payment Discover Card/Paypal/Wire transfer/Visa
Shipment Way DHL/Fedex/TNT/UPS/EMS
Lead Free Status / ROHS Status Lead free / ROHS Compliant
In StockN/A
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Specifications of RN1910FE(T5L,F,T)

Part Number RN1910FE(T5L,F,T) Manufacturer Toshiba Semiconductor and Storage
Series -Packaging Cut Tape (CT)
Description TRANS 2NPN PREBIAS 0.1W ES6Other Names RN1910FE(T5LFT)CT
Power - Max 100mWMounting Type Surface Mount
Package / Case SOT-563, SOT-666Transistor Type 2 NPN - Pre-Biased (Dual)
Quantity Available 238826 pcsDetailed Description Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
Resistor - Base (R1) 4.7 kOhmsFrequency - Transition 250MHz
Supplier Device Package ES6Resistor - Emitter Base (R2) -
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mACurrent - Collector (Ic) (Max) 100mA
Lead Free Status / RoHS Status Lead free / RoHS CompliantCurrent - Collector Cutoff (Max) 100nA (ICBO)
Moisture Sensitivity Level (MSL) 1 (Unlimited)DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Voltage - Collector Emitter Breakdown (Max) 50V
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