Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
RN1102MFV,L3F
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RN1102MFV,L3F

Part Number: RN1102MFV,L3F
Manufacturer/Brand: Toshiba Semiconductor and Storage
Product description TRANS PREBIAS NPN 50V 0.15W VESM
Datasheets: 1.RN1102MFV,L3F.pdf 2.RN1102MFV,L3F.pdf
Stock Condition N/A
Ship From Hong Kong
Payment Discover Card/Paypal/Wire transfer/Visa
Shipment Way DHL/Fedex/TNT/UPS/EMS
Lead Free Status / ROHS Status Lead free / ROHS Compliant
In StockN/A
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Specifications of RN1102MFV,L3F

Part Number RN1102MFV,L3F Manufacturer Toshiba Semiconductor and Storage
Series -Packaging Cut Tape (CT)
Description TRANS PREBIAS NPN 50V 0.15W VESMOther Names RN1102MFV(TL3T)CT RN1102MFV(TL3T)CT-ND RN1102MFVL3F(BCT RN1102MFVL3F(BCT-ND RN1102MFVL3FCT
Power - Max 150mWMounting Type Surface Mount
Package / Case SOT-723Transistor Type NPN - Pre-Biased
Quantity Available 323256 pcsDetailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM
Resistor - Base (R1) 10 kOhmsSupplier Device Package VESM
Resistor - Emitter Base (R2) 10 kOhmsVce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA
Current - Collector (Ic) (Max) 100mALead Free Status / RoHS Status Lead free / RoHS Compliant
Current - Collector Cutoff (Max) 500nAMoisture Sensitivity Level (MSL) 1 (Unlimited)
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 5VVoltage - Collector Emitter Breakdown (Max) 50V
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