LAPIS Semiconductor LAPIS Semiconductor
R6030KNZ1C9
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R6030KNZ1C9

Part Number: R6030KNZ1C9
Manufacturer/Brand: LAPIS Semiconductor
Product description MOSFET N-CHANNEL 600V 30A TO247
Datasheets: 1.R6030KNZ1C9.pdf
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Lead Free Status / ROHS Status Lead free / ROHS Compliant
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Specifications of R6030KNZ1C9

Part Number R6030KNZ1C9 Manufacturer LAPIS Semiconductor
Series -FET Type N-Channel
Packaging Tape & Reel (TR)Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)Description MOSFET N-CHANNEL 600V 30A TO247
FET Feature -Other Names R6030KNZ1C9TR R6030KNZ1C9TR-ND
Mounting Type Through HolePackage / Case TO-247-3
Quantity Available 22172 pcsVgs(th) (Max) @ Id 5V @ 1mA
Detailed Description N-Channel 600V 30A (Tc) 305W (Tc) Through Hole TO-247Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 130 mOhm @ 14.5A, 10VPower Dissipation (Max) 305W (Tc)
Supplier Device Package TO-247Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Drain to Source Voltage (Vdss) 600VLead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)Input Capacitance (Ciss) (Max) @ Vds 2350pF @ 25V
Drive Voltage (Max Rds On, Min Rds On) 10VCurrent - Continuous Drain (Id) @ 25°C 30A (Tc)
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