LAPIS Semiconductor LAPIS Semiconductor
R6030ENZ1C9
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R6030ENZ1C9

Part Number: R6030ENZ1C9
Manufacturer/Brand: LAPIS Semiconductor
Product description MOSFET N-CH 600V 30A TO247
Datasheets: 1.R6030ENZ1C9.pdf
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Lead Free Status / ROHS Status Lead free / ROHS Compliant
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Specifications of R6030ENZ1C9

Part Number R6030ENZ1C9 Manufacturer LAPIS Semiconductor
Series -FET Type N-Channel
Packaging TubeVgs (Max) ±20V
Technology MOSFET (Metal Oxide)Description MOSFET N-CH 600V 30A TO247
FET Feature -Mounting Type Through Hole
Package / Case TO-247-3Quantity Available 14413 pcs
Vgs(th) (Max) @ Id 4V @ 1mADetailed Description N-Channel 600V 30A (Tc) 120W (Tc) Through Hole TO-247
Operating Temperature 150°C (TJ)Rds On (Max) @ Id, Vgs 130 mOhm @ 14.5A, 10V
Power Dissipation (Max) 120W (Tc)Supplier Device Package TO-247
Gate Charge (Qg) (Max) @ Vgs 85nC @ 10VDrain to Source Voltage (Vdss) 600V
Lead Free Status / RoHS Status Lead free / RoHS CompliantMoisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 2100pF @ 25VDrive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
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