LAPIS Semiconductor LAPIS Semiconductor
R6009ENJTL
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R6009ENJTL

Part Number: R6009ENJTL
Manufacturer/Brand: LAPIS Semiconductor
Product description MOSFET N-CH 600V 9A LPT
Datasheets: 1.R6009ENJTL.pdf 2.R6009ENJTL.pdf
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Lead Free Status / ROHS Status Lead free / ROHS Compliant
In StockN/A
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Specifications of R6009ENJTL

Part Number R6009ENJTL Manufacturer LAPIS Semiconductor
Series -FET Type N-Channel
Packaging Cut Tape (CT)Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)Description MOSFET N-CH 600V 9A LPT
FET Feature -Other Names R6009ENJTLCT
Mounting Type Surface MountPackage / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Quantity Available 28738 pcsVgs(th) (Max) @ Id 4V @ 1mA
Detailed Description N-Channel 600V 9A (Tc) 40W (Tc) Surface Mount LPTS (D2PAK)Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 535 mOhm @ 2.8A, 10VPower Dissipation (Max) 40W (Tc)
Supplier Device Package LPTS (D2PAK)Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Drain to Source Voltage (Vdss) 600VLead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)Input Capacitance (Ciss) (Max) @ Vds 430pF @ 25V
Drive Voltage (Max Rds On, Min Rds On) 10VCurrent - Continuous Drain (Id) @ 25°C 9A (Tc)
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