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PSMN4R3-80ES,127
| Part Number: | PSMN4R3-80ES,127 |
|---|---|
| Manufacturer/Brand: | Nexperia |
| Product description | MOSFET N-CH 80V 120A I2PAK |
| Datasheets: | 1.PSMN4R3-80ES,127.pdf 2.PSMN4R3-80ES,127.pdf |
| Stock Condition | N/A |
| Ship From | Hong Kong |
| Payment | Discover Card/Paypal/Wire transfer/Visa |
| Shipment Way | DHL/Fedex/TNT/UPS/EMS |
| Lead Free Status / ROHS Status |  Lead free / ROHS Compliant
|
In StockN/A
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Specifications of PSMN4R3-80ES,127
| Part Number | PSMN4R3-80ES,127 | Manufacturer | Nexperia |
|---|---|---|---|
| Series | - | FET Type | N-Channel |
| Packaging | Tube | Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) | Description | MOSFET N-CH 80V 120A I2PAK |
| FET Feature | - | Other Names | 1727-5280 568-6708 568-6708-5 568-6708-5-ND 568-6708-ND 934065164127 |
| Mounting Type | Through Hole | Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Quantity Available | 25426 pcs | Vgs(th) (Max) @ Id | 4V @ 1mA |
| Detailed Description | N-Channel 80V 120A (Tc) 306W (Tc) Through Hole I2PAK | Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 4.3 mOhm @ 25A, 10V | Power Dissipation (Max) | 306W (Tc) |
| Supplier Device Package | I2PAK | Gate Charge (Qg) (Max) @ Vgs | 111nC @ 10V |
| Drain to Source Voltage (Vdss) | 80V | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Input Capacitance (Ciss) (Max) @ Vds | 8161pF @ 40V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
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