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NVD5867NLT4G-TB01
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NVD5867NLT4G-TB01

Part Number: NVD5867NLT4G-TB01
Manufacturer/Brand: AMI Semiconductor / ON Semiconductor
Product description MOSFET N-CH 60V 22A DPAK DPAK
Datasheets: 1.NVD5867NLT4G-TB01.pdf
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Lead Free Status / ROHS Status Lead free / ROHS Compliant
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Specifications of NVD5867NLT4G-TB01

Part Number NVD5867NLT4G-TB01 Manufacturer AMI Semiconductor / ON Semiconductor
Series Automotive, AEC-Q101FET Type N-Channel
Vgs (Max) ±20VTechnology MOSFET (Metal Oxide)
Description MOSFET N-CH 60V 22A DPAK DPAKFET Feature -
Mounting Type Surface MountPackage / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity Available 4667 pcsVgs(th) (Max) @ Id 2.5V @ 250µA
Detailed Description N-Channel 60V 6A (Ta), 22A (Tc) 3.3W (Ta), 43W (Tc) Surface Mount DPAK-3Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 39 mOhm @ 11A, 10VPower Dissipation (Max) 3.3W (Ta), 43W (Tc)
Supplier Device Package DPAK-3Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Drain to Source Voltage (Vdss) 60VLead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)Input Capacitance (Ciss) (Max) @ Vds 675pF @ 25V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10VCurrent - Continuous Drain (Id) @ 25°C 6A (Ta), 22A (Tc)
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