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NSBA113EDXV6T1G
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NSBA113EDXV6T1G

Part Number: NSBA113EDXV6T1G
Manufacturer/Brand: AMI Semiconductor / ON Semiconductor
Product description TRANS 2PNP PREBIAS 0.25W SOT563
Datasheets: 1.NSBA113EDXV6T1G.pdf
Stock Condition N/A
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Payment Discover Card/Paypal/Wire transfer/Visa
Shipment Way DHL/Fedex/TNT/UPS/EMS
Lead Free Status / ROHS Status Lead free / ROHS Compliant
In StockN/A
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Specifications of NSBA113EDXV6T1G

Part Number NSBA113EDXV6T1G Manufacturer AMI Semiconductor / ON Semiconductor
Series -Packaging Tape & Reel (TR)
Description TRANS 2PNP PREBIAS 0.25W SOT563Power - Max 250mW
Mounting Type Surface MountPackage / Case 6-TSSOP, SC-88, SOT-363
Transistor Type 2 PNP - Pre-Biased (Dual)Quantity Available 954998 pcs
Detailed Description Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363Resistor - Base (R1) 1 kOhms
Frequency - Transition -Supplier Device Package SC-88/SC70-6/SOT-363
Resistor - Emitter Base (R2) 1 kOhmsVce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA
Current - Collector (Ic) (Max) 100mALead Free Status / RoHS Status Lead free / RoHS Compliant
Current - Collector Cutoff (Max) 500nAMoisture Sensitivity Level (MSL) 1 (Unlimited)
DC Current Gain (hFE) (Min) @ Ic, Vce 3 @ 5mA, 10VVoltage - Collector Emitter Breakdown (Max) 50V
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