Fujitsu Electronics America, Inc. Fujitsu Electronics America, Inc.
MB85R256GPF-G-BNDE1
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MB85R256GPF-G-BNDE1

Part Number: MB85R256GPF-G-BNDE1
Manufacturer/Brand: Fujitsu Electronics America, Inc.
Product description IC FRAM 256K PARALLEL 28SOP
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Specifications of MB85R256GPF-G-BNDE1

Part Number MB85R256GPF-G-BNDE1 Manufacturer Fujitsu Electronics America, Inc.
Series -Technology FRAM (Ferroelectric RAM)
Access Time 150nsDescription IC FRAM 256K PARALLEL 28SOP
Memory Size 256Kb (32K x 8)Memory Type Non-Volatile
Memory Format FRAMMemory Interface Parallel
Voltage - Supply 2.7 V ~ 3.6 VQuantity Available 3554 pcs
Detailed Description FRAM (Ferroelectric RAM) Memory IC 256Kb (32K x 8) Parallel 150nsOperating Temperature -40°C ~ 85°C (TA)
Write Cycle Time - Word, Page 150nsLead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
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