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IPD048N06L3GBTMA1
| Part Number: | IPD048N06L3GBTMA1 |
|---|---|
| Manufacturer/Brand: | International Rectifier (Infineon Technologies) |
| Product description | MOSFET N-CH 60V 90A TO252-3 |
| Datasheets: | 1.IPD048N06L3GBTMA1.pdf |
| Stock Condition | N/A |
| Ship From | Hong Kong |
| Payment | Discover Card/Paypal/Wire transfer/Visa |
| Shipment Way | DHL/Fedex/TNT/UPS/EMS |
| Lead Free Status / ROHS Status |  Lead free / ROHS Compliant
|
In StockN/A
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Specifications of IPD048N06L3GBTMA1
| Part Number | IPD048N06L3GBTMA1 | Manufacturer | International Rectifier (Infineon Technologies) |
|---|---|---|---|
| Series | OptiMOS™ | FET Type | N-Channel |
| Packaging | Original-Reel® | Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) | Description | MOSFET N-CH 60V 90A TO252-3 |
| FET Feature | - | Other Names | IPD048N06L3GBTMA1DKR |
| Mounting Type | Surface Mount | Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Quantity Available | 59374 pcs | Vgs(th) (Max) @ Id | 2.2V @ 58µA |
| Detailed Description | N-Channel 60V 90A (Tc) 115W (Tc) Surface Mount PG-TO252-3 | Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 4.8 mOhm @ 90A, 10V | Power Dissipation (Max) | 115W (Tc) |
| Supplier Device Package | PG-TO252-3 | Gate Charge (Qg) (Max) @ Vgs | 50nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 60V | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Input Capacitance (Ciss) (Max) @ Vds | 8400pF @ 30V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
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|---|---|---|
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