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HUF76419S3ST-F085
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HUF76419S3ST-F085

Part Number: HUF76419S3ST-F085
Manufacturer/Brand: AMI Semiconductor / ON Semiconductor
Product description MOSFET N-CH 60V 29A TO-263AB
Datasheets: 1.HUF76419S3ST-F085.pdf
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Lead Free Status / ROHS Status Lead free / ROHS Compliant
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Specifications of HUF76419S3ST-F085

Part Number HUF76419S3ST-F085 Manufacturer AMI Semiconductor / ON Semiconductor
Series Automotive, AEC-Q101, PowerTrench®FET Type N-Channel
Packaging Original-Reel®Vgs (Max) ±16V
Technology MOSFET (Metal Oxide)Description MOSFET N-CH 60V 29A TO-263AB
FET Feature -Other Names HUF76419S3ST-F085DKR HUF76419S3ST_F085DKR HUF76419S3ST_F085DKR-ND
Mounting Type Surface MountPackage / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Quantity Available 46881 pcsVgs(th) (Max) @ Id 3V @ 250µA
Detailed Description N-Channel 60V 29A (Tc) 100W (Tc) Surface Mount D²PAK (TO-263AB)Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 35 mOhm @ 29A, 10VPower Dissipation (Max) 100W (Tc)
Supplier Device Package D²PAK (TO-263AB)Gate Charge (Qg) (Max) @ Vgs 28.5nC @ 10V
Drain to Source Voltage (Vdss) 60VLead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)Input Capacitance (Ciss) (Max) @ Vds 870pF @ 25V
Drive Voltage (Max Rds On, Min Rds On) 10VCurrent - Continuous Drain (Id) @ 25°C 29A (Tc)
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