Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
HN3C10FUTE85LF
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HN3C10FUTE85LF

Part Number: HN3C10FUTE85LF
Manufacturer/Brand: Toshiba Semiconductor and Storage
Product description TRANSISTOR NPN US6
Datasheets: 1.HN3C10FUTE85LF.pdf
Stock Condition N/A
Ship From Hong Kong
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Shipment Way DHL/Fedex/TNT/UPS/EMS
Lead Free Status / ROHS Status Lead free / ROHS Compliant
In StockN/A
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Specifications of HN3C10FUTE85LF

Part Number HN3C10FUTE85LF Manufacturer Toshiba Semiconductor and Storage
Gain 11.5dBSeries -
Packaging Cut Tape (CT)Description TRANSISTOR NPN US6
Other Names HN3C10FUTE85LFCTPower - Max 200mW
Mounting Type Surface MountPackage / Case 6-TSSOP, SC-88, SOT-363
Transistor Type 2 NPN (Dual)Quantity Available 170500 pcs
Detailed Description RF Transistor 2 NPN (Dual) 12V 80mA 7GHz 200mW Surface Mount US6Operating Temperature -
Frequency - Transition 7GHzSupplier Device Package US6
Noise Figure (dB Typ @ f) 1.1dB @ 1GHzCurrent - Collector (Ic) (Max) 80mA
Lead Free Status / RoHS Status Lead free / RoHS CompliantMoisture Sensitivity Level (MSL) 1 (Unlimited)
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 20mA, 10VVoltage - Collector Emitter Breakdown (Max) 12V
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