Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
HN1B01FU-GR,LF
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HN1B01FU-GR,LF

Part Number: HN1B01FU-GR,LF
Manufacturer/Brand: Toshiba Semiconductor and Storage
Product description TRANS NPN/PNP 50V 0.15A US6-PLN
Datasheets: 1.HN1B01FU-GR,LF.pdf 2.HN1B01FU-GR,LF.pdf
Stock Condition N/A
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Shipment Way DHL/Fedex/TNT/UPS/EMS
Lead Free Status / ROHS Status Lead free / ROHS Compliant
In StockN/A
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Specifications of HN1B01FU-GR,LF

Part Number HN1B01FU-GR,LF Manufacturer Toshiba Semiconductor and Storage
Series -Packaging Tape & Reel (TR)
Description TRANS NPN/PNP 50V 0.15A US6-PLNOther Names HN1B01FU-GR(L,F,T) HN1B01FU-GR,LF(B HN1B01FU-GR,LF(T HN1B01FU-GRLF HN1B01FU-GRLF-ND HN1B01FU-GRLFTR HN1B01FUGRLFT HN1B01FUGRLFTTR HN1B01FUGRLFTTR-ND
Power - Max 200mW, 210mWMounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363Transistor Type NPN, PNP
Quantity Available 1700447 pcsDetailed Description Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 150MHz 200mW, 210mW Surface Mount US6
Operating Temperature 125°C (TJ)Frequency - Transition 150MHz
Supplier Device Package US6Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Current - Collector (Ic) (Max) 150mALead Free Status / RoHS Status Lead free / RoHS Compliant
Current - Collector Cutoff (Max) 100nA (ICBO)Moisture Sensitivity Level (MSL) 1 (Unlimited)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6VVoltage - Collector Emitter Breakdown (Max) 50V
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