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HGTP10N120BN
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HGTP10N120BN

Part Number: HGTP10N120BN
Manufacturer/Brand: AMI Semiconductor / ON Semiconductor
Product description IGBT 1200V 35A 298W TO220AB
Datasheets: 1.HGTP10N120BN.pdf 2.HGTP10N120BN.pdf
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Lead Free Status / ROHS Status Lead free / ROHS Compliant
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Specifications of HGTP10N120BN

Part Number HGTP10N120BN Manufacturer AMI Semiconductor / ON Semiconductor
Series -IGBT Type NPT
Packaging TubeInput Type Standard
Description IGBT 1200V 35A 298W TO220ABGate Charge 100nC
Other Names HGTP10N120BN-ND HGTP10N120BNFSPower - Max 298W
Mounting Type Through HolePackage / Case TO-220-3
Test Condition 960V, 10A, 10 Ohm, 15VSwitching Energy 320µJ (on), 800µJ (off)
Quantity Available 53766 pcsTd (on/off) @ 25°C 23ns/165ns
Detailed Description IGBT NPT 1200V 35A 298W Through Hole TO-220ABOperating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package TO-220ABVce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Current - Collector (Ic) (Max) 35ALead Free Status / RoHS Status Lead free / RoHS Compliant
Current - Collector Pulsed (Icm) 80AMoisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Collector Emitter Breakdown (Max) 1200V
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