Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
GT10J312(Q)
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GT10J312(Q)

Part Number: GT10J312(Q)
Manufacturer/Brand: Toshiba Semiconductor and Storage
Product description IGBT 600V 10A 60W TO220SM
Datasheets: 1.GT10J312(Q).pdf
Stock Condition N/A
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Shipment Way DHL/Fedex/TNT/UPS/EMS
Lead Free Status / ROHS Status Lead free / ROHS Compliant
In StockN/A
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Specifications of GT10J312(Q)

Part Number GT10J312(Q) Manufacturer Toshiba Semiconductor and Storage
Series -IGBT Type -
Packaging TubeInput Type Standard
Description IGBT 600V 10A 60W TO220SMPower - Max 60W
Mounting Type Surface MountPackage / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Test Condition 300V, 10A, 100 Ohm, 15VBase Part Number GT10
Switching Energy -Quantity Available 6036 pcs
Td (on/off) @ 25°C 400ns/400nsDetailed Description IGBT 600V 10A 60W Surface Mount TO-220SM
Operating Temperature 150°C (TJ)Supplier Device Package TO-220SM
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10AReverse Recovery Time (trr) 200ns
Current - Collector (Ic) (Max) 10ALead Free Status / RoHS Status Lead free / RoHS Compliant
Current - Collector Pulsed (Icm) 20AMoisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Collector Emitter Breakdown (Max) 600V
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