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FQI27N25TU-F085
| Part Number: | FQI27N25TU-F085 |
|---|---|
| Manufacturer/Brand: | AMI Semiconductor / ON Semiconductor |
| Product description | MOSFET N-CH 250V 25.5A I2PAK |
| Datasheets: | 1.FQI27N25TU-F085.pdf |
| Stock Condition | N/A |
| Ship From | Hong Kong |
| Payment | Discover Card/Paypal/Wire transfer/Visa |
| Shipment Way | DHL/Fedex/TNT/UPS/EMS |
| Lead Free Status / ROHS Status |  Lead free / ROHS Compliant
|
In StockN/A
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Specifications of FQI27N25TU-F085
| Part Number | FQI27N25TU-F085 | Manufacturer | AMI Semiconductor / ON Semiconductor |
|---|---|---|---|
| Series | Automotive, AEC-Q101 | FET Type | N-Channel |
| Packaging | Tube | Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) | Description | MOSFET N-CH 250V 25.5A I2PAK |
| FET Feature | - | Other Names | FQI27N25TU_F085 FQI27N25TU_F085-ND |
| Mounting Type | Through Hole | Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Quantity Available | 21827 pcs | Vgs(th) (Max) @ Id | 5V @ 250µA |
| Detailed Description | N-Channel 250V 25.5A (Tc) 3.13W (Ta), 417W (Tc) Through Hole I2PAK (TO-262) | Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 110 mOhm @ 12.75A, 10V | Power Dissipation (Max) | 3.13W (Ta), 417W (Tc) |
| Supplier Device Package | I2PAK (TO-262) | Gate Charge (Qg) (Max) @ Vgs | 65nC @ 10V |
| Drain to Source Voltage (Vdss) | 250V | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 25V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | Current - Continuous Drain (Id) @ 25°C | 25.5A (Tc) |
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|---|---|---|
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