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FQD8P10TM-F085
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FQD8P10TM-F085

Part Number: FQD8P10TM-F085
Manufacturer/Brand: AMI Semiconductor / ON Semiconductor
Product description MOSFET P-CH 100V 6.6A DPAK-3
Datasheets: 1.FQD8P10TM-F085.pdf
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Lead Free Status / ROHS Status Lead free / ROHS Compliant
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Specifications of FQD8P10TM-F085

Part Number FQD8P10TM-F085 Manufacturer AMI Semiconductor / ON Semiconductor
Series Automotive, AEC-Q101FET Type P-Channel
Packaging Original-Reel®Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)Description MOSFET P-CH 100V 6.6A DPAK-3
FET Feature -Other Names FQD8P10TM-F085DKR FQD8P10TM_F085DKR FQD8P10TM_F085DKR-ND
Mounting Type Surface MountPackage / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity Available 100807 pcsVgs(th) (Max) @ Id 4V @ 250µA
Detailed Description P-Channel 100V 6.6A (Tc) 2.5W (Ta), 44W (Tc) Surface Mount D-PakOperating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 530 mOhm @ 3.3A, 10VPower Dissipation (Max) 2.5W (Ta), 44W (Tc)
Supplier Device Package D-PakGate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Drain to Source Voltage (Vdss) 100VLead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)Input Capacitance (Ciss) (Max) @ Vds 470pF @ 25V
Drive Voltage (Max Rds On, Min Rds On) 10VCurrent - Continuous Drain (Id) @ 25°C 6.6A (Tc)
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