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FQA13N80-F109
| Part Number: | FQA13N80-F109 |
|---|---|
| Manufacturer/Brand: | AMI Semiconductor / ON Semiconductor |
| Product description | MOSFET N-CH 800V 12.6A TO-3P |
| Datasheets: | 1.FQA13N80-F109.pdf |
| Stock Condition | N/A |
| Ship From | Hong Kong |
| Payment | Discover Card/Paypal/Wire transfer/Visa |
| Shipment Way | DHL/Fedex/TNT/UPS/EMS |
| Lead Free Status / ROHS Status |  Lead free / ROHS Compliant
|
In StockN/A
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Specifications of FQA13N80-F109
| Part Number | FQA13N80-F109 | Manufacturer | AMI Semiconductor / ON Semiconductor |
|---|---|---|---|
| Series | QFET® | FET Type | N-Channel |
| Packaging | Tube | Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) | Description | MOSFET N-CH 800V 12.6A TO-3P |
| FET Feature | - | Other Names | FQA13N80_F109 FQA13N80_F109-ND FQA13N80_F109FS FQA13N80_F109FS-ND FQA13N80F109 |
| Mounting Type | Through Hole | Package / Case | TO-3P-3, SC-65-3 |
| Quantity Available | 15237 pcs | Vgs(th) (Max) @ Id | 5V @ 250µA |
| Detailed Description | N-Channel 800V 12.6A (Tc) 300W (Tc) Through Hole TO-3PN | Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 750 mOhm @ 6.3A, 10V | Power Dissipation (Max) | 300W (Tc) |
| Supplier Device Package | TO-3PN | Gate Charge (Qg) (Max) @ Vgs | 88nC @ 10V |
| Drain to Source Voltage (Vdss) | 800V | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Input Capacitance (Ciss) (Max) @ Vds | 3500pF @ 25V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | Current - Continuous Drain (Id) @ 25°C | 12.6A (Tc) |
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|---|---|---|
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