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FDP3651U
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FDP3651U

Part Number: FDP3651U
Manufacturer/Brand: AMI Semiconductor / ON Semiconductor
Product description MOSFET N-CH 100V 80A TO-220AB
Datasheets: 1.FDP3651U.pdf 2.FDP3651U.pdf
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Lead Free Status / ROHS Status Lead free / ROHS Compliant
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Specifications of FDP3651U

Part Number FDP3651U Manufacturer AMI Semiconductor / ON Semiconductor
Series PowerTrench®FET Type N-Channel
Packaging TubeVgs (Max) ±20V
Technology MOSFET (Metal Oxide)Description MOSFET N-CH 100V 80A TO-220AB
FET Feature -Mounting Type Through Hole
Package / Case TO-220-3Quantity Available 25933 pcs
Vgs(th) (Max) @ Id 5.5V @ 250µADetailed Description N-Channel 100V 80A (Tc) 255W (Tc) Through Hole TO-220-3
Operating Temperature -55°C ~ 175°C (TJ)Rds On (Max) @ Id, Vgs 18 mOhm @ 80A, 10V
Power Dissipation (Max) 255W (Tc)Supplier Device Package TO-220-3
Gate Charge (Qg) (Max) @ Vgs 69nC @ 10VDrain to Source Voltage (Vdss) 100V
Lead Free Status / RoHS Status Lead free / RoHS CompliantMoisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 5522pF @ 25VDrive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
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