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FDP027N08B-F102
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FDP027N08B-F102

Part Number: FDP027N08B-F102
Manufacturer/Brand: AMI Semiconductor / ON Semiconductor
Product description MOSFET N-CH 80V 120A TO-220-3
Datasheets: 1.FDP027N08B-F102.pdf
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Lead Free Status / ROHS Status Lead free / ROHS Compliant
In StockN/A
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Specifications of FDP027N08B-F102

Part Number FDP027N08B-F102 Manufacturer AMI Semiconductor / ON Semiconductor
Series PowerTrench®FET Type N-Channel
Packaging TubeVgs (Max) ±20V
Technology MOSFET (Metal Oxide)Description MOSFET N-CH 80V 120A TO-220-3
FET Feature -Other Names FDP027N08B_F102 FDP027N08B_F102-ND
Mounting Type Through HolePackage / Case TO-220-3
Quantity Available 29785 pcsVgs(th) (Max) @ Id 4.5V @ 250µA
Detailed Description N-Channel 80V 120A (Tc) 246W (Tc) Through Hole TO-220-3Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 2.7 mOhm @ 100A, 10VPower Dissipation (Max) 246W (Tc)
Supplier Device Package TO-220-3Gate Charge (Qg) (Max) @ Vgs 178nC @ 10V
Drain to Source Voltage (Vdss) 80VLead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)Input Capacitance (Ciss) (Max) @ Vds 13530pF @ 40V
Drive Voltage (Max Rds On, Min Rds On) 10VCurrent - Continuous Drain (Id) @ 25°C 120A (Tc)
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