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FDI045N10A-F102
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FDI045N10A-F102

Part Number: FDI045N10A-F102
Manufacturer/Brand: AMI Semiconductor / ON Semiconductor
Product description MOSFET N-CH 100V 120A I2PAK-3
Datasheets: 1.FDI045N10A-F102.pdf
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Lead Free Status / ROHS Status Lead free / ROHS Compliant
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Specifications of FDI045N10A-F102

Part Number FDI045N10A-F102 Manufacturer AMI Semiconductor / ON Semiconductor
Series PowerTrench®FET Type N-Channel
Packaging TubeVgs (Max) ±20V
Technology MOSFET (Metal Oxide)Description MOSFET N-CH 100V 120A I2PAK-3
FET Feature -Other Names FDI045N10A_F102 FDI045N10A_F102-ND
Mounting Type Through HolePackage / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Quantity Available 17240 pcsVgs(th) (Max) @ Id 4V @ 250µA
Detailed Description N-Channel 100V 120A (Tc) 263W (Tc) Through Hole I2PAK (TO-262)Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 4.5 mOhm @ 100A, 10VPower Dissipation (Max) 263W (Tc)
Supplier Device Package I2PAK (TO-262)Gate Charge (Qg) (Max) @ Vgs 74nC @ 10V
Drain to Source Voltage (Vdss) 100VLead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)Input Capacitance (Ciss) (Max) @ Vds 5270pF @ 50V
Drive Voltage (Max Rds On, Min Rds On) 10VCurrent - Continuous Drain (Id) @ 25°C 120A (Tc)
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