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FDI038AN06A0
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FDI038AN06A0

Part Number: FDI038AN06A0
Manufacturer/Brand: AMI Semiconductor / ON Semiconductor
Product description MOSFET N-CH 60V 80A TO-262AB
Datasheets: 1.FDI038AN06A0.pdf
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Lead Free Status / ROHS Status Lead free / ROHS Compliant
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Specifications of FDI038AN06A0

Part Number FDI038AN06A0 Manufacturer AMI Semiconductor / ON Semiconductor
Series PowerTrench®FET Type N-Channel
Packaging TubeVgs (Max) ±20V
Technology MOSFET (Metal Oxide)Description MOSFET N-CH 60V 80A TO-262AB
FET Feature -Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AAQuantity Available 21553 pcs
Vgs(th) (Max) @ Id 4V @ 250µADetailed Description N-Channel 60V 17A (Ta), 80A (Tc) 310W (Tc) Through Hole I2PAK (TO-262)
Operating Temperature -55°C ~ 175°C (TJ)Rds On (Max) @ Id, Vgs 3.8 mOhm @ 80A, 10V
Power Dissipation (Max) 310W (Tc)Supplier Device Package I2PAK (TO-262)
Gate Charge (Qg) (Max) @ Vgs 124nC @ 10VDrain to Source Voltage (Vdss) 60V
Lead Free Status / RoHS Status Lead free / RoHS CompliantMoisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 6400pF @ 25VDrive Voltage (Max Rds On, Min Rds On) 6V, 10V
Current - Continuous Drain (Id) @ 25°C 17A (Ta), 80A (Tc)
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