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FDD850N10L
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FDD850N10L

Part Number: FDD850N10L
Manufacturer/Brand: AMI Semiconductor / ON Semiconductor
Product description MOSFET N-CH 100V 15.7A DPAK-3
Datasheets: 1.FDD850N10L.pdf
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Shipment Way DHL/Fedex/TNT/UPS/EMS
Lead Free Status / ROHS Status Lead free / ROHS Compliant
In StockN/A
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Specifications of FDD850N10L

Part Number FDD850N10L Manufacturer AMI Semiconductor / ON Semiconductor
Series PowerTrench®FET Type N-Channel
Packaging Cut Tape (CT)Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)Description MOSFET N-CH 100V 15.7A DPAK-3
FET Feature -Other Names FDD850N10LCT
Mounting Type Surface MountPackage / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Quantity Available 95381 pcsVgs(th) (Max) @ Id 2.5V @ 250µA
Detailed Description N-Channel 100V 15.7A (Tc) 50W (Tc) Surface Mount DPAKOperating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 75 mOhm @ 12A, 10VPower Dissipation (Max) 50W (Tc)
Supplier Device Package DPAKGate Charge (Qg) (Max) @ Vgs 28.9nC @ 10V
Drain to Source Voltage (Vdss) 100VLead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)Input Capacitance (Ciss) (Max) @ Vds 1465pF @ 25V
Drive Voltage (Max Rds On, Min Rds On) 5V, 10VCurrent - Continuous Drain (Id) @ 25°C 15.7A (Tc)
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