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FDC021N30
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FDC021N30

Part Number: FDC021N30
Manufacturer/Brand: AMI Semiconductor / ON Semiconductor
Product description PT8 N 30V/20V, MOSFET
Datasheets: 1.FDC021N30.pdf
Stock Condition N/A
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Shipment Way DHL/Fedex/TNT/UPS/EMS
Lead Free Status / ROHS Status Lead free / ROHS Compliant
In StockN/A
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Specifications of FDC021N30

Part Number FDC021N30 Manufacturer AMI Semiconductor / ON Semiconductor
Series PowerTrench®FET Type N-Channel
Packaging Original-Reel®Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)Description PT8 N 30V/20V, MOSFET
FET Feature -Other Names FDC021N30DKR
Mounting Type Surface MountPackage / Case SOT-23-6
Quantity Available 182929 pcsVgs(th) (Max) @ Id 3V @ 250µA
Detailed Description N-Channel 30V 6.1A (Ta) 700mW (Ta) Surface Mount SuperSOT™-6Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 26 mOhm @ 6.1A, 10VPower Dissipation (Max) 700mW (Ta)
Supplier Device Package SuperSOT™-6Gate Charge (Qg) (Max) @ Vgs 10.8nC @ 10V
Drain to Source Voltage (Vdss) 30VLead Free Status / RoHS Status
Moisture Sensitivity Level (MSL) 1 (Unlimited)Input Capacitance (Ciss) (Max) @ Vds 710pF @ 15V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10VCurrent - Continuous Drain (Id) @ 25°C 6.1A (Ta)
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