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FDB8896-F085
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FDB8896-F085

Part Number: FDB8896-F085
Manufacturer/Brand: AMI Semiconductor / ON Semiconductor
Product description MOSFET N-CH 30V 19A TO-263AB
Datasheets: 1.FDB8896-F085.pdf
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Lead Free Status / ROHS Status Lead free / ROHS Compliant
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Specifications of FDB8896-F085

Part Number FDB8896-F085 Manufacturer AMI Semiconductor / ON Semiconductor
Series Automotive, AEC-Q101, PowerTrench®FET Type N-Channel
Packaging Original-Reel®Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)Description MOSFET N-CH 30V 19A TO-263AB
FET Feature -Other Names FDB8896-F085DKR FDB8896_F085DKR FDB8896_F085DKR-ND
Mounting Type Surface MountPackage / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Quantity Available 55401 pcsVgs(th) (Max) @ Id 2.5V @ 250µA
Detailed Description N-Channel 30V 19A (Ta), 93A (Tc) 80W (Tc) Surface Mount TO-263ABOperating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 5.7 mOhm @ 35A, 10VPower Dissipation (Max) 80W (Tc)
Supplier Device Package TO-263ABGate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Drain to Source Voltage (Vdss) 30VLead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)Input Capacitance (Ciss) (Max) @ Vds 2525pF @ 15V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10VCurrent - Continuous Drain (Id) @ 25°C 19A (Ta), 93A (Tc)
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