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FCP190N65F
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FCP190N65F

Part Number: FCP190N65F
Manufacturer/Brand: AMI Semiconductor / ON Semiconductor
Product description MOSFET N-CH 650V 20.6A TO220-3
Datasheets: 1.FCP190N65F.pdf
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Lead Free Status / ROHS Status Lead free / ROHS Compliant
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Specifications of FCP190N65F

Part Number FCP190N65F Manufacturer AMI Semiconductor / ON Semiconductor
Series FRFET®, SuperFET® IIFET Type N-Channel
Packaging TubeVgs (Max) ±20V
Technology MOSFET (Metal Oxide)Description MOSFET N-CH 650V 20.6A TO220-3
FET Feature -Mounting Type Through Hole
Package / Case TO-220-3Quantity Available 24747 pcs
Vgs(th) (Max) @ Id 5V @ 2mADetailed Description N-Channel 650V 20.6A (Tc) 208W (Tc) Through Hole TO-220-3
Operating Temperature -55°C ~ 150°C (TJ)Rds On (Max) @ Id, Vgs 190 mOhm @ 10A, 10V
Power Dissipation (Max) 208W (Tc)Supplier Device Package TO-220-3
Gate Charge (Qg) (Max) @ Vgs 78nC @ 10VDrain to Source Voltage (Vdss) 650V
Lead Free Status / RoHS Status Lead free / RoHS CompliantMoisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 3225pF @ 25VDrive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 20.6A (Tc)
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