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FCP190N60-GF102
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FCP190N60-GF102

Part Number: FCP190N60-GF102
Manufacturer/Brand: AMI Semiconductor / ON Semiconductor
Product description MOSFET N-CH 600V TO-220-3
Datasheets: 1.FCP190N60-GF102.pdf
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Lead Free Status / ROHS Status Lead free / ROHS Compliant
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Specifications of FCP190N60-GF102

Part Number FCP190N60-GF102 Manufacturer AMI Semiconductor / ON Semiconductor
Series SuperFET® IIFET Type N-Channel
Packaging TubeVgs (Max) ±20V
Technology MOSFET (Metal Oxide)Description MOSFET N-CH 600V TO-220-3
FET Feature -Other Names FCP190N60_GF102 FCP190N60_GF102-ND
Mounting Type Through HolePackage / Case TO-220-3
Quantity Available 24160 pcsVgs(th) (Max) @ Id 3.5V @ 250µA
Detailed Description N-Channel 600V 20.2A (Tc) 208W (Tc) Through Hole TO-220Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 199 mOhm @ 10A, 10VPower Dissipation (Max) 208W (Tc)
Supplier Device Package TO-220Gate Charge (Qg) (Max) @ Vgs 74nC @ 10V
Drain to Source Voltage (Vdss) 600VLead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)Input Capacitance (Ciss) (Max) @ Vds 2950pF @ 25V
Drive Voltage (Max Rds On, Min Rds On) 10VCurrent - Continuous Drain (Id) @ 25°C 20.2A (Tc)
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