Diodes Incorporated Diodes Incorporated
DMG4N65CT
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DMG4N65CT

Part Number: DMG4N65CT
Manufacturer/Brand: Diodes Incorporated
Product description MOSFET N CH 650V 4A TO220-3
Datasheets: 1.DMG4N65CT.pdf
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Lead Free Status / ROHS Status Lead free / ROHS Compliant
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Specifications of DMG4N65CT

Part Number DMG4N65CT Manufacturer Diodes Incorporated
Series -FET Type N-Channel
Packaging TubeVgs (Max) ±30V
Technology MOSFET (Metal Oxide)Description MOSFET N CH 650V 4A TO220-3
FET Feature -Other Names DMG4N65CTDI
Mounting Type Through HolePackage / Case TO-220-3
Quantity Available 76855 pcsVgs(th) (Max) @ Id 5V @ 250µA
Detailed Description N-Channel 650V 4A (Tc) 2.19W (Ta) Through Hole TO-220-3Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 3 Ohm @ 2A, 10VPower Dissipation (Max) 2.19W (Ta)
Supplier Device Package TO-220-3Gate Charge (Qg) (Max) @ Vgs 13.5nC @ 10V
Drain to Source Voltage (Vdss) 650VLead Free Status / RoHS Status Contains lead / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)Input Capacitance (Ciss) (Max) @ Vds 900pF @ 25V
Drive Voltage (Max Rds On, Min Rds On) 10VCurrent - Continuous Drain (Id) @ 25°C 4A (Tc)
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