Microsemi Microsemi
APTM100H80FT1G
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APTM100H80FT1G

Part Number: APTM100H80FT1G
Manufacturer/Brand: Microsemi
Product description MOSFET 4N-CH 1000V 11A SP1
Datasheets: 1.APTM100H80FT1G.pdf 2.APTM100H80FT1G.pdf
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Lead Free Status / ROHS Status Lead free / ROHS Compliant
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Specifications of APTM100H80FT1G

Part Number APTM100H80FT1G Manufacturer Microsemi
Series -FET Type 4 N-Channel (H-Bridge)
Packaging BulkDescription MOSFET 4N-CH 1000V 11A SP1
FET Feature StandardPower - Max 208W
Mounting Type Chassis MountPackage / Case SP1
Quantity Available 6210 pcsVgs(th) (Max) @ Id 5V @ 1mA
Detailed Description Mosfet Array 4 N-Channel (H-Bridge) 1000V (1kV) 11A 208W Chassis Mount SP1Operating Temperature -40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 960 mOhm @ 9A, 10VSupplier Device Package SP1
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10VDrain to Source Voltage (Vdss) 1000V (1kV)
Lead Free Status / RoHS Status Lead free / RoHS CompliantMoisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 3876pF @ 25VCurrent - Continuous Drain (Id) @ 25°C 11A
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