1N8030-GA

Name: 1N8030-GA
Brand: GeneSiC Semiconductor
Availability: InStock
Rating: 5 (1 reviews)

Part Number:	1N8030-GA
Manufacturer/Brand:	GeneSiC Semiconductor
Product description	DIODE SCHOTTKY 650V 750MA TO257
Datasheets:	1.1N8030-GA.pdf
Stock Condition	N/A
Ship From	Hong Kong
Payment	Discover Card/Paypal/Wire transfer/Visa
Shipment Way	DHL/Fedex/TNT/UPS/EMS
Lead Free Status / ROHS Status	Lead free / ROHS Compliant

In StockN/A

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Specifications of 1N8030-GA

Part Number	1N8030-GA	Manufacturer	GeneSiC Semiconductor
Speed	No Recovery Time > 500mA (Io)	Series	-
Packaging	Tube	Diode Type	Silicon Carbide Schottky
Description	DIODE SCHOTTKY 650V 750MA TO257	Other Names	1242-1117 1N8030GA
Mounting Type	Through Hole	Package / Case	TO-257-3
Base Part Number	1N8030	Quantity Available	570 pcs
Capacitance @ Vr, F	76pF @ 1V, 1MHz	Detailed Description	Diode Silicon Carbide Schottky 650V 750mA Through Hole TO-257
Supplier Device Package	TO-257	Reverse Recovery Time (trr)	0ns
Current - Reverse Leakage @ Vr	5µA @ 650V	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Voltage - DC Reverse (Vr) (Max)	650V	Current - Average Rectified (Io)	750mA
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Operating Temperature - Junction	-55°C ~ 250°C
Voltage - Forward (Vf) (Max) @ If	1.39V @ 750mA

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