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NAND04GW3C2BN6E
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NAND04GW3C2BN6E

Part Number: NAND04GW3C2BN6E
Manufacturer/Brand: Micron Technology
Product description IC FLASH 4G PARALLEL 48TSOP
Datasheets: 1.NAND04GW3C2BN6E.pdf
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Lead Free Status / ROHS Status Lead free / ROHS Compliant
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Specifications of NAND04GW3C2BN6E

Part Number NAND04GW3C2BN6E Manufacturer Micron Technology
Series -Packaging Tray
Technology FLASH - NANDAccess Time 25ns
Description IC FLASH 4G PARALLEL 48TSOPMemory Size 4Gb (512M x 8)
Memory Type Non-VolatileMemory Format FLASH
Mounting Type Surface MountPackage / Case 48-TFSOP (0.724", 18.40mm Width)
Base Part Number NAND04GMemory Interface Parallel
Voltage - Supply 2.7 V ~ 3.6 VQuantity Available 9759 pcs
Detailed Description FLASH - NAND Memory IC 4Gb (512M x 8) Parallel 25ns 48-TSOPOperating Temperature -40°C ~ 85°C (TA)
Supplier Device Package 48-TSOPWrite Cycle Time - Word, Page 25ns
Lead Free Status / RoHS Status Lead free / RoHS CompliantMoisture Sensitivity Level (MSL) 3 (168 Hours)
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